1,075,076. Circuits employing bi-stable magnetic elements. SPERRY RAND CORPORATION. Sept. 17, 1964 [Oct. 1, 1963], No. 38052/64. Heading H3B. The magnetic thin film storage elements of a plated wire memory device are each biased by a unidirectional magnetic field which rotates the remanent magnetization vector towards the " hard " magnetization direction, adjacent elements being biased in opposite directions. In a wire memory consisting of bit conductors 10, each coated with a magnetic layer having a circumferential " easy " direction (Fig. 1, not shown), the drive conductors 12, 14, 16 which loop round each memory wire are supplied with a constant D.C. bias, the currents in adjacent drive conductors being in opposite directions. During writing, a current pulse is also supplied to the selected drive line simultaneously with current pulses to selected bit conductors. It is stated that the D.C. bias reduces the leakage field between adjacent bits and so reduces " creep."